QL65J7SA Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Visible Laser Diode

QL65J7SA
TECHNICAL DATA
Visible Laser Diode
Features
• Lasing Mode Structure: single mode
• Peak Wavelength : typ. 660 nm
• Optical Ouput Power: 50 mW
• Package: 5.6 mm
Electrical Connection
Pin Configuration
n-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
InGaAIP
Bottom View
Absolute Maximum Ratings (T_C=20°C)
Item
CW Output Power
Laser Diode Reverse Voltage
Photo Diode Reverse Voltage
Operating Case Temperature
Storage Temperature
Symbol
P_O
V_LDR
V_PDR
T_C
T_stg
Value
60
2
30
-10 … +75
-40 … +85
Unit
mW
V
V
°C
°C
Specifications (T_C=20°C)
Item
Optical Specifications
CW Output Power
Center Wavelength
Beam Divergence
Beam Angle
Optical Distance
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
Operating Voltage
Monitor Current
Symbol
P_O
λ_C
θ_║
θ_┴
Δθ_║
Δθ_┴
ΔX, ΔY, ΔZ
I_th
I_op
η
V_op
I_m
Min.
-
653
6
15
-
-
-
30
-
-
-
0.01
Typ.
50
660
9
20
-
-
-
45
90
1.0
2.6
0.3
Max.
-
667
12
25
±3
±3
±60
60
120
-
3.0
1.0
Unit
mW
nm
deg
deg
deg
deg
µm
mA
mA
W/A
V
mA
The above specifications are for reference purpose only and subjected to change without prior notice.
08.08.2011
QL65J7SA
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