QL65D6SA Datasheet, PDF (1/3 Pages) List of Unclassifed Manufacturers – InGaAlP Laser Diode

QL65D6SA
TECHNICAL DATA
Red Laser Diode
Features
• InGaAlP laser diode
• Peak Wavelength: 650 nm
• Optical Ouput Power: 5 mW
• Package: 5.6 mm, with Photo Diode
Electrical Connection
Pin Configuration
m-type
PIN
Function
1 LD Cathode
2 LD Anode, PD Cathode
3 PD Anode
Bottom View
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Value
Unit
Optical Output Power
P_O (CW)
7
mW
LD Reverse Voltage
V_R (LD)
2
V
PD Reverse Voltage
V_R (PD)
30
V
Operating Case Temperature
T_C
-10 … +60
°C
Storage Temperature
T_stg
-40 … +85
°C
Specifications (T_C=25°C)
Item
Symbol
Min.
Typ.
Max.
Unit
Optical Specifications
Optical Output Power (CW)
P_O
-
5
-
mW
Peak Wavelength
λ_P
650
655
660
nm
FWHM Beam Divergence
θ_║
7.0
8.5
10.0
deg
θ_┴
26
28
32
deg
Emission Point Accuracy
Angle
Δθ_║
Δθ_┴
-
-
-
±1.5
deg
-
±2.5
deg
KINK
K-LI
-
-
10
%
Astigmatism
As
-
-
10
µm
Optical Distance
ΔX,ΔY,ΔZ
-
-
±60
µm
Electrical Specifications
Threshold Current
Operating Current
Slope Efficiency
I_th
-
30
45
mA
I_op
-
40
55
mA
η
0.4
0.5
0.8
W/A
Operating Voltage
Monitor Current
PD Dark Current
PD Capacitance
V_op
-
2.2
2.6
V
I_m
0.1
0.2
0.5
mA
I_D
-
5
10
nA
Ct
-
-5
-10
pF
The above specifications are for reference purpose only and subjected to change without prior notice.
13.03.2012
QL65D6SA
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