OPE5594S Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – The OPE5594S is GaAlAs infrared emitting diode

GaAlAs Infrared Emitter C
OPE5594S
The OPE5594S is GaAlAs infrared emitting diode
that is designed for high reliability, high radiant intensity and
low forward voltage .This device is optimized for efficiency
at emission wavelength 940nm and has a high radiant
efficiency over a wide range of forward current.
This device is packaged T1-3/4 plastic package
and has medium beam angle with lensed package
and cup frame.
DIMENSIONS (Unit:mm)
FEATURESC
• High-output powerC
• Medium beam angle
• High reliability and long term stability
• Available for pulse operating
C
APPLICATIONSC
• Optical emitters
• Optical switches
• Smoke sensors
• IR remote control
• IR sound transmission
2- 0.5
2.5
Anode
Cathode
Tolerance : ±0.2mm
STORAGE
• Condition : 5°C~35°C,R.H.60%
• Terms : within 3 months from production date
• Remark : Once the package is opened, the products should be used within a day.
Otherwise, it should be keeping in a damp proof box with desiccants.
* Please take proper steps in order to secure reliability and safety in required conditions and
environments for this device.
MAXIMUM RATINGSC C
C
CCCCCCCCCCCCCCCCC(Ta=25°C )
Item
Symbol
Rating
Unit
Power Dissipation
P_DC
150
C
Forward current
I_FC
100
EC
Pulse forward current ^CCCCCC
1 _{Reverse voltage}
I_FPC
V_RC
1.0
5.0
AC
C
Operating temp.
Topr.
-25~ +85
°CC
Soldering temp. ^{CCCCCCCCCCCCCCCÊ­2} Tsol.
260.
°CC
Ê­1_{.Duty ratio = 1/100, pulse width=0.1ms.}
Ê­2_{.Lead Soldering Temperature (2mm from case for 5sec.).}
ELECTRO-OPTICALCHARACTERISTICS
Item
Symbol
Forward voltage
V_F
Reverse current
I_R
Capacitance
Ct
Radiant intensity
Ie
Peak emission wavelength
p
Spectral bandwidth 50%
Half angle

Conditions
I_F =100mA
V_R= 5V
f = 1MHz
I_F=100mA
I_F= 100mA
I_F= 100mA
I_F=100mA
(Ta=25°C)
Min. Typ. Max. Unit
1.4
1.7
V
10
µA
20
pF
60
mW/
940
nm
45
nm
±10
deg.
43