LED940-66-60 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED940-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
GaAs
LED940-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency GaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
GaAs, 60 LED chips
940 nm
300 mW
TO-66 stem with AIN
clear epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
7.0
Forward Current
I_F
1
Pulse Forward Current *¹
I_FP
5
Reverse Voltage
V_R
50
Junction Temperature
T_J
100
Thermal Resistance *²
R_TH
9
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *³
T_stg
-30 … +110
T_sol
240
*¹ duty = 1%, pulse width = 1 µs
*² junction – package, mounted on heat sink
*³ must be completed within 3 seconds at 260°C
Unit
W
A
A
V
°C
K/W
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Forward Voltage
Reverse Voltage
Viewing Half Angle
λ_P
I_F = 800 mA
Δλ
I_F = 800 mA
P_O
I_F = 800 mA
I_E
I_F = 800 mA
V_F
I_F = 800 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 800 mA
Radiated Power measured by S3584-08
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
930
-
-
-
-
50
-
Typ.
940
60
300
-
6.7
-
±60
Max.
955
-
-
-
-
-
-
Unit
nm
nm
mW
mW/sr
V
V
deg.
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED940-66-60
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