LED890-66-60 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED890-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
AlGaAs
LED890-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: AlGaAs, 60 LED chips
• Peak Wavelength: typ. 890 nm
• Optical Output Power: typ. 850 mW
• Package: TO-66 stem with AIN,
clear silicon and epoxy resin
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulsed Forward Current *¹
I_FP
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds
Value
7.5
1000
2.5
50
-30 … +80
-30 … +110
265
Unit
W
mA
A
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Total Radiated Power
Total Radiated Power
Radiant Intensity
Forward Voltage
Peak Wavelength
Half Width
Viewing Half Angle
P_O
I_F = 800 mA
P_O
I_FP = 5 A
I_E
I_F = 800 mA
V_F
I_F = 800 mA
λ_P
I_F = 800 mA
Δλ
I_F = 800 mA
Θ_1/2
I_F = 800 mA
Heat Sink is required, LED is required to keep less than 60°C
Notes
Min.
-
-
-
-
875
-
-
Typ.
850
5500
300
7.0
890
40
±60
Max.
-
-
-
-
905
-
-
Unit
mW
mW
mW/sr
V
nm
nm
deg.
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
26.03.2012
LED890-66-60
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