LED870-01UP Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared LED Lamp

LED870-01UP
(LN870-01UP) Infrared LED Lamp
LED870-01UP is an AlGaAs LED mounted on a lead frame with a clear epoxy lens.
On forward bias, it emits a spectral band of radiation which peaks at 870 nm.
Specifications
Outer dimension（Unit: mm）
1)Product Name
Infrared LED Lamp
2)Type No.
LED870-01UP
3)Chip
(1)Chip Material
AlGaAs
(2)Peak Wavelength 870 nm typ.
4)Package
(1)Type
Φ5mm clear molding
(2)Resin Material Epoxy Resin
(3)Lead Frame
Soldered
Absolute Maximum Ratings
Item
Symbol Maximum Rated Value Unit
Power Dissipation
PD
160
mW
Forward Current
IF
100
mA
Pulse Forward Current
IFP
1000
mA
Reverse Voltage
VR
5
V
Operating Temperature TOPR
-30 ~ +85
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature TSOL
260
°C
Ambient Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
‡Pulse Forward Current condition: Duty=1% and Pulse Width=10us.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics [Ta=25°C
Item
Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Symbol
VF
IR
PO
IE
λP
Δλ
θ 1/2
ｔｒ
Fall Time
ｔｆ
Condition
IF=50mA
VR=5V
IF=50mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
IF=50mA
Minimum
18.0
60
860
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512.
Typical
1.50
22.0
90
870
35
±10
15
10
Maximum
1.70
10
880
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
18.08.2010
led870_01up.doc
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