LED850-66-60 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED850-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
AlGaAs
LED850-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
AlGaAs, 60 LED chips
850 nm
1.5 W
TO-66 stem with AIN
clear silicone and epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
7.5
Forward Current
I_F
1.2
Pulse Forward Current *¹
I_FP
6
Reverse Voltage
V_R
50
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +110
T_sol
240
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds at 260°C
Unit
W
A
A
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Forward Voltage
Reverse Voltage
Viewing Half Angle
Rise Time
Fall Time
λ_P
I_F = 800 mA
Δλ
I_F = 800 mA
P_O
I_F = 800 mA
I_FP = 5 A
I_E
I_F = 800 mA
V_F
I_F = 800 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 800 mA
t_R
I_F = 100 mA
t_F
I_F = 100 mA
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
840
-
-
-
-
-
50
-
-
-
Typ.
850
40
1.5
9.0
400
7.5
-
±60
30
20
Max.
860
-
-
-
-
-
-
-
-
-
Unit
nm
nm
W
mW/sr
V
V
deg.
ns
ns
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED850-66-60
1 of 3