LED780-PD010-40D52 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – LED780-PD010-40D52 consists of a GaAlAs LED 780 nm and a Si-PD mounted

LED780-PD010-40D52
v 1.1 19.09.2014
LED780-PD010-40D52 consists of a GaAlAs LED 780 nm and a Si-PD mounted onTO-18 stem
hermetically sealed with a glass flat can, and is designed to monitor reflected light through
detector for controlling its own output power.
Specifications
Product Name: LED Lamp with PD Monitor
Type No.: LED780-PD010-40D52
Chip material: GaAlAs , Si (PIN)
Peak wavelength: 780 nm
Package: Stem TO-18
Lens: Ø5 2.4 Flat Glass
Can: Metal Can (Gold Plate )
Absolute Maximum Ratings [Ta=25°C]
Device
Item
Symbol
Maximum Rated
LED
Power Dissipation
PD
LED
Forward Current
IF
LED
Pulse Forward Current
IFP
LED
Reverse Voltage
VR
PD
Reverse Voltage
VR
Operating Temperature
TCASE
Storage Temperature
TSTG
Soldering Temperature
TSLD
Pulse Forward Current condition: Duty = 1%, tw = 10 µs
Soldering condition: Soldering condition must be completed within 3 seconds at 250°C
200
100
500
5
100
-20 ~ +85
-30 ~ +100
260
Electro-Optical Charactaristics [Ta=25°C]
Item
Symbol
Condition
Forward Voltage
VF
IF=50mA
Reverse Current
IR
VR=5V
Total Radiated Power
PO
IF=50mA
Radiant Intensity
IE
IF=50mA
Peak Wavelength
λP
IF=50mA
Half Width
∆λ
IF=50mA
Viewing Half Angle
φ
IF=50mA
Rise Time
tR
IF=50mA
Fall Time
tF
IF=50mA
Output Current
IL
VR=0V
Dark Current
ID
VR=10V
Total Radiated Power is measured by Photodyne #500
Min.
3.0
2.5
765
250
Typ.
1.70
6.0
5.0
780
35
±55
60
40
500
Max.
2.00
10
795
10
Unit
mW
mA
A
V
V
°C
°C
°C
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
uA
nA
© All Rights Reserved
The above specifications are for reference purpose only and subjected to change without prior notice
www.roithner-laser.com
1