LED770-03AU Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – Infrared LED Lamp

LED770-03AU
Infrared LED Lamp
LED770-03AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens.
On forward bias, it emits a spectral band of radiation which peaks at 770 nm.
Specifications
Outer dimension (Unit: mm)
1) Product Name Infrared LED Lamp
2) Type No.
LED770-03AU
3) Chip
(1) Chip Material AlGaAs
(2) Peak Wavelength 770 nm typ.
4) Package
(1) Type
5 mm clear molding
(2) Resin Material Epoxy Resin
(3) Lead Frame
Soldered
Absolute Maximum Ratings
Item
Symbol Maximum Rated Value Unit
Power Dissipation
PD
190
mW
Forward Current
IF
100
mA
Pulse Forward Current
IFP
500
mA
Reverse Voltage
VR
5
V
Operating Temperature TOPR
-30 ~ +85
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature TSOL
260
°C
Ambient Temperature
Ta = 25°C
Ta = 25°C
Ta = 25°C
Ta = 25°C
‡Pulse Forward Current condition: Duty = 1% and Pulse Width = 10 µs.
‡Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics [Ta=25°C]
Item
Forward Voltage
Reverse Current
Total Radiated Power
Radiant Intensity
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
Symbol
VF
IR
PO
IE
λP
Δλ
α
tr
tf
Condition
IF = 50 mA
VR = 5 V
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
IF = 50 mA
Minimum
13.0
18
750
Typical
1.75
18.0
35
770
35
±15
80
80
Maximum
1.95
10
790
Unit
V
uA
mW
mW/sr
nm
nm
deg.
ns
ns
‡Total Radiated Power is measured by Photodyne #500
‡Radiant Intensity is measured by Tektronix J-6512
18.08.2010
LED770_03AU.doc
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