LED750 Datasheet, PDF (1/8 Pages) Roithner LaserTechnik GmbH – Infrared LED

LED750-series
TECHNICAL DATA
Infrared LED
AlGaAs
LED750-series are AlGaAs LEDs mounted on a lead frame and encapsulated in various types of
epoxy lens, which offers different design settings.
On forward bias, it emits a high power radiation of typical 19 mW at a peak wavelength at 750 nm.
Specifications
• Structure: AlGaAs
• Peak Wavelength: typ. 750 nm
• Optical Ouput Power: typ. 19 mW
• Resin Material: Epoxy resin
• Solder: Lead free
Absolute Maximum Ratings (T_a=25°C)
Type
Symbol
Value
Unit
Power Dissipation
P_D
200
mW
Forward Current
I_F
100
mA
Pulse Forward Current
I_FP
500
mA
Reverse Voltage
V_R
5
V
Operating Temperature
T_OP
-30 … +85
°C
Storage Temperature
T_STG
-40 … +100
°C
Soldering Temperature (for 5 sec.)
T_SOL
265
°C
Electro-Optical Characteristics (T_a=25°C)
Item
Forward Voltage
Reverse Current
Radiated Power
Peak Wavelength
Half Width
Rise Time
Fall Time
Symbol
V_F
I_R
P_O
λ_P
Δλ
t_r
t_f
Condition
I_F = 50 mA
V_R = 5 V
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
Min.
-
-
14
-
-
-
-
Typ.
1.8
-
19
750
30
50
25
Max.
Unit
2.2
V
10
µA
-
mW
-
nm
-
nm
-
ns
-
ns
21.11.2011
LED750-series
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