LED690-66-60 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED690-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
GaAs
LED690-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency AlGaAs diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: GaAs, 60 LED chips
• Peak Wavelength: typ. 690 nm
• Optical Output Power: typ. 300 mW
• Package: TO-66 stem with AIN,
clear silicone and epoxy resin
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol Value
Power Dissipation
P_D
Forward Current
I_F
Pulsed Forward current *²
I_FP
4.0
400
2000
Reverse Voltage
V_R
50
Operating Temperature
T_opr
-30 … +80
Storage Temperature
T_stg
-30 … +110
Soldering Temperature *
T_sol
240
* must be completed within 3 seconds
*² max puls width 1µs and max duty cycle 1%
Unit
W
mA
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Total Radiated Power
Forward Voltage
Reverse Voltage
Peak Wavelength
Half Width
Viewing Half Angle
P_O
I_F = 600 mA
V_F
I_F = 600 mA
V_R
I_R = 10 µA
λ_P
I_F = 600 mA
Δλ
I_F = 600 mA
Θ_1/2
I_F = 600 mA
Heat Sink is required, thermal resistance <8K/W
Min.
-
-
50
670
-
-
Typ.
300
9.8
-
690
20
±60
Max.
-
-
-
710
-
-
Unit
mW
V
V
nm
nm
deg.
Notes
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
07.04.2011
LED690-66-60
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