LED660N-66-60 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED660N-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
AlGaInP
LED660N-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency AlGaInP diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
AlGaInP, 60 LED chips
• Peak Wavelength:
660 nm
• Optical Output Power:
2.4 W
• Package:
TO-66 stem with AIN
• Lens:
clear silicone and/or epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
16.8
Forward Current
I_F
1.2
Reverse Voltage
V_R
50
Junction Temperature
T_J
100
Thermal Resistance *¹
R_TH
2
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +110
T_sol
240
*¹ junction – package, mounted on heat sink
*² must be completed within 3 seconds at 260°C
Unit
W
A
V
°C
K/W
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Brightness
Forward Voltage
Reverse Voltage
Viewing Half Angle
λ_P
I_F = 600 mA
Δλ
I_F = 600 mA
P_O
I_F = 600 mA
I_F = 1.2 A
I_E
I_F = 600 mA
I_F = 1.2 A
I_V
I_F = 600 mA
I_F = 1.2 A
V_F
I_F = 600 mA
I_F = 1.2 A
V_R
I_R = 10 µA
Θ_1/2
I_F = 600 mA
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
-
-
-
-
-
-
-
-
-
-
50
-
Typ.
660
16
1.2
2.4
270
540
31.4
62.8
11.2
12.0
-
±60
Max.
-
-
-
-
-
-
-
-
-
-
-
-
Unit
nm
nm
W
mW/sr
cd
V
V
deg.
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED660N-66-60
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