LED660N-03 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – Infrared LED

LED660N-03
TECHNICAL DATA
Infrared LED, 5 mm
AlGaInP
LED660N-series are AlGaInP LEDs mounted on a lead frame and encapsulated in various types of epoxy
lens, which offers different design settings.
On forward bias, it emits a high power radiation of typical 15 mW at a peak wavelength at 660 nm.
Specifications
• Structure: AlGaAs
• Peak Wavelength: typ. 660 nm
• Optical Ouput Power: typ. 15 mW
• Resin Material: Epoxy resin
• Solder: Lead free
Absolute Maximum Ratings (T_a=25°C)
Type
Power Dissipation
Forward Current
Forward pulsed Current*
Reverse Voltage
Junction Temperature
Thermal Resistance
Operating Temperature
Storage Temperature
Soldering Temperature (for 5 sec.)
* Pulse condition: Duty 1%, Puls Width 10µs
Symbol
P_D
I_F
I_FP
V_R
T_J
R_thjp
T_OP
T_STG
T_SOL
Value
120
50
200
5
100
190
-30 … +80
-40 … +100
265
Unit
mW
mA
mA
V
°C
K/W
°C
°C
°C
Electro-Optical Characteristics (T_a=25°C)
Item
Forward Voltage
Reverse Current
Radiated Power
Peak Wavelength
Half Width
Rise Time
Fall Time
Symbol
V_F
I_R
P_O
λ_P
Δλ
t_r
t_f
Condition
I_F = 50 mA
V_R = 5 V
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
I_F = 50 mA
Min.
-
-
8
650
-
-
-
Typ.
2.1
-
15
660
18
80
80
Max.
Unit
2.3
V
10
µA
-
mW
670
nm
-
nm
-
ns
-
ns
Characteristics of Radiant Intensity (T_a=25°C)
Type
LED660N-03
Viewing
Half Angle
±12°
Brightness / Radiation Intensity (I_F = 50 mA)
[Unit: mW/sr]
Typ.
25
* Radiant Power is measured by S3584-08
* Brightness is measured by TekTronix J-16
Outer Dimension
Ø 5 mm
The above specifications are for reference purpose only and subjected to change without prior notice.
12.12.2011
LED660N-03
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