LED570-66-60 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED570-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaAlP
LED570-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaAlP diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: InGaAlP, 60 LED chips
• Peak Wavelength: typ. 570 nm
• Optical Output Power: typ. 36 mW
• Package: TO-66 stem with AIN,
clear epoxy resin
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulsed Forward Current *¹
I_FP
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds
Value
4.5
400
600
50
-30 … +85
-30 … +110
265
Unit
W
mA
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Total Radiated Power
Brightness
Forward Voltage
Reverse Voltage
Peak Wavelength
Half Width
Viewing Half Angle
P_O
I_F = 240 mA
I_V
I_F = 240 mA
V_F
I_F = 240 mA
V_R
I_R = 10 µA
λ_P
I_F = 240 mA
Δλ
I_F = 240 mA
Θ_1/2
I_F = 240 mA
Heat Sink is required, thermal resistance <8K/W
Min.
-
-
-
50
560
-
-
Typ.
36
7.0
11.0
-
570
15
±60
Max.
-
-
-
-
580
-
-
Unit
mW
cd
V
V
nm
nm
deg.
Notes
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
17.08.2011
LED570-66-60
1 of 1