LED505-66-60 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED505-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaN
LED505-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
InGaN, 60 LED chips
505 nm
60 mW
TO-66 stem with AIN
clear silicone and epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
7.8
Forward Current
I_F
Pulse Forward Current *¹
I_FP
400
2000
Reverse Voltage
V_R
50
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +110
T_sol
240
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds at 260°C
Unit
W
mA
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Brightness
Forward Voltage
Reverse Voltage
Viewing Half Angle
λ_P
I_F = 240 mA
Δλ
I_F = 240 mA
P_O
I_F = 240 mA
I_E
I_F = 240 mA
I_V
I_F = 240 mA
V_F
I_F = 240 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 240 mA
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
495
-
-
-
-
-
30
-
Typ.
505
30
60
10
4.5
18.5
-
±60
Max.
515
-
-
-
-
-
-
-
Unit
nm
nm
mW
mW/sr
cd
V
V
deg.
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED505-66-60
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