LED470-66-16100 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED470-66-16100
TECHNICAL DATA
High Power LED Array, 4 x 4 matrix
InGaN
LED470-66-16100 is composed by 16pcs. of 1 x 1 mm² high current drive InGaN blue color diode
chips, mounted on a metal stem TO-66 and covered with epoxy resin.
It is designed for wide viewing and extremely high output power illuminator.
Specifications
• Structure: InGaN, 16 power LED chips, 4 x 4 array
• Peak Wavelength: typ. 465 nm
• Optical Output Power: typ. 420 mW
• Package: TO-66 stem,
clear silicone and epoxy resin
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current *¹
I_FP
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty cycle = 1%, pulse width = 1µs
*² must be completed within 3 seconds
Value
8.5
1.6
2.0
30
-30 … +80
-30 … +100
265
Unit
W
A
A
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol
Forward Voltage
V_F
Brightness
I_V
Total Radiated Power
P_O
Reverse Voltage
V_R
Peak Wavelength
λ_P
Half Width
Δλ
Viewing Half Angle
Θ_1/2
LED is required to keep less than 60°C
Condition
I_F = 1.2 A
I_F = 1.2 A
I_F = 1.2 A
I_R = 10 µA
I_F = 1.2 A
I_F = 1.2 A
I_F = 1.2 A
Min.
-
-
-
20
-
-
-
Typ.
14.0
-
420
-
465
20
±55
Max.
-
-
-
-
-
-
-
Unit
V
cd
mW
V
nm
nm
deg.
Notes
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
07.04.2011
LED470-66-16100
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