LED430-66-60 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED430-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaN
LED430-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 with AIN ceramics
and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
InGaN, 60 LED chips
430 nm
550 mW
TO-66 stem with AIN
clear silicone and epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature *
P_D
12.0
I_F
600
V_R
30
T_opr
-30 … +80
T_stg
-30 … +110
T_sol
240
* must be completed within 3 seconds at 260°C
Unit
W
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Brightness
Forward Voltage
Reverse Voltage
Viewing Half Angle
λ_P
I_F = 240 mA
Δλ
I_F = 240 mA
P_O
I_F = 400 mA
I_E
I_F = 400 mA
I_V
I_F = 400 mA
V_F
I_F = 400 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 240 mA
Total Radiated Power measured by S3584-08.
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
-
-
-
-
-
-
30
-
Typ.
430
15
550
-
-
19.0
-
±60
Max.
-
-
-
-
-
-
-
-
Unit
nm
nm
mW
mW/sr
cd
V
V
deg.
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED430-66-60
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