LED415-66-60-110 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED415-66-60-110
TECHNICAL DATA
High Power LED Array, 60 chips, Glass Window
LED415-66-60-110 is a wide viewing and extremely high output power illuminator assembled with
a total of 60 high efficiency InGaN diode chips, mounted on a metal stem TO-66 and covered with
a flat glass cap.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: InGaN, 60 LED chips
• Peak Wavelength: typ. 415 nm
• Optical Output Power: typ. 300 mW
• Package: TO-66 stem,
Flat glass cap
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulse Forward Current *¹
I_FP
Reverse Voltage
V_R
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty cycle = 1%, pulse width = 1µs
*² must be completed within 3 seconds
Value
6.0
300
500
30
-30 … +80
-30 … +100
240
Unit
W
mA
MA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Min.
Typ.
Total Radiated Power
Birghtness
Forward Voltage
Reverse Voltage
Peak Wavelength
Half Width
Viewing Half Angle
P_O
I_F = 240 mA
-
I_V
I_F = 240 mA
-
V_F
I_F = 240 mA
-
V_R
I_R = 10 µA
30
λ_P
I_F = 240 mA
405
Δλ
I_F = 240 mA
Θ_1/2
I_F = 240 mA
-
300
80
18.0
-
415
15
±55
Heat Sink is required, thermal resistance <8K/W
Brightness is measured by Tektronix J-16
Total Radiated Power is measured by Anode Optical Multi Meter AQ2140 & AQ2741
Max.
-
-
-
-
425
-
Unit
mW
mcd
V
V
nm
nm
deg.
Notes
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
07.04.2011
LED415-66-60-110
1 of 1