LED39-PR Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Mid-Infrared Light Emitting Diode

LED39-PR
TECHNICAL DATA
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 3.90 µm series are based on heterostructures grown
on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for good electron confinement.
LED39-PR has a stable ouput power and a lifetime more then 80000 hours.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
InAsSb/InAsSbP
typ. 3.90 µm
typ. 20 µW qCW
TO-18
with PR and without window
Absolute Maximum Ratings (T_A=25°C)
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
Min.
3.85
0.55
15
Value
Typ.
3.90
0.65
20
Unit
Max.
3.94 µm
0.75 µm
30 µW
1A
180
200
220 mW
T=300 K
10
20
30 ns
200 mA qCW 0.2
-
0.8
V
-200 … +50
°C
300 x 300
µm
180
°C
TO-18, with parabol reflector and without window
Operation Instructions
• LED basic circuit connection
(Unit: mm)
• We recommend to use one of our drivers
and evaluation boards designed for those
Mid-IR LEDs
D-11, D-31, D-31M
DLT-27, DLT-37
mD-1c, mD-1p
10.09.2012
LED39-PR
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