LED385-66-60-110 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED385-66-60-110
TECHNICAL DATA
High Power LED Array, 60 chips
PRELIMINARY
InGaN
LED385-66-60-110 is a wide viewing and extremely high output power illuminator assembled with
a total of 60 high efficiency InGaN UV diode chips, mounted on a metal stem TO-66 and covered a
with flat glass cap.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
InGaN, 60 LED chips
385 nm
150 mW
TO-66 stem
flat glass cap
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
5.0
Forward Current
I_F
300
Reverse Voltage
V_R
20
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +110
T_sol
240
*¹ junction – package, mounted on heat sink
*² must be completed within 3 seconds at 260°C
Unit
W
mA
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Peak Wavelength
Half Width
Total Radiated Power
Radiant Intensity
Brightness
Forward Voltage
Reverse Voltage
Viewing Half Angle
λ_P
I_F = 200 mA
Δλ
I_F = 200 mA
P_O
I_F = 200 mA
I_E
I_F = 200 mA
I_V
I_F = 200 mA
V_F
I_F = 200 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 200 mA
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
375
-
-
-
-
-
20
-
Typ.
385
17
150
-
-
17.0
-
±55
Max.
395
-
-
-
-
-
-
-
Unit
nm
nm
mW
mW/sr
cd
V
V
deg.
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED385-66-60-110
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