LED38-PR Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – LIGHT EMITTING DIODES

LIGHT EMITTING DIODES 1.6÷4.6 µm
Model LED38-PR
•Light Emitting Diodes LED38-PR are designed for emitting at a spectral
range around 3800 nm. Heterostructures (HS) are grown on InAs
substrates. The output emission can be modulated by current flowing in
a forward direction.
•Light Emitting Diodes LED38-PR are developed for using in optical gas
sensors and medical diagnostics. They have stable output power and
lifetime more then 10000 hours.
•Related products: Our standard LED Driver provides power supply of
LED38-PR in two recommended here regimes (Quasi-CW and Pulsed).
3.8 µm 16 µW
Parameters
Wavelength, µm
FWHM, µm
Optical Power, µW
Quasi-CW @ 200 mA
Pulsed@1A
Switching Time, ns
Operating Temperature
Range, ^oC
Emitting Area, µm
Soldering temperature
Package
Min
Typ
Max
3.70
3.80
3.90
0.60
0.70
0.80
12
16
20
180
200
220
10
30
50
-240÷+50
300x300
260 ^oC
TO-18 with Parabolic Reflector
Recommended regimes of operation
Quasi-CW
f=2 kHz
250 µs 250 µs
Pulse
200 mA
1 µs
f=2 kHz
2A
500 µs
Package TO-18 with Reflector
LED38 typical spectra at different temperatures
20
15
T=6°C
T=21°C
10
T=50°C
5
LED38 - typical power vs. current
characteristic at different
20
temperatures
16
12
8
T=6°C
T=21°C
4
T=50°C
0
0
50_Curren10_t,0 _mA 150
200
0
2700 2900 3100 3300 3500 3700 3900 4100 4300 4500 4700
Wavelength, nm
LED38 - typical Current-voltage
characteristi₄c₀
30
20
10
0
-2 -1,5 -1 -0,5-10 0 0,5
-20
-30
-40
Voltage, V
Far field pattern
with and without reflector
1
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
LED38 (without reflector)
LED38-PR (with reflector)