LED36-PR-WIN Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Mid-Infrared Light Emitting Diode

LED36-PR-WIN
TECHNICAL DATA
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 3.65 µm series are based on heterostructures grown
on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for good electron confinement.
LED36-SMD3 has a stable ouput power and a lifetime more then 80000 hours.
Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.65 µm
• Optical Ouput Power: typ. 30 µW qCW
• Package: TO-18, with PR and window
Specifications
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
Rating
Min. Typ.
3.60 3.65
0.40 0.50
20
30
Max. ^Unit
3.70 µm
0.60 µm
40 µW
1A
180
200 220 mW
T=300 K
10
200 mA qCW 0.2
20
30 ns
-
1.0 V
-240 … +50
°C
300x300
µm
180
°C
TO-18, with parabol reflector and window
(Unit: mm)
Operating Regime
Quasi-CW
• Maximum current 220 mA
• Recommended current 150-200mA
Pulsed
• Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
24.11.2010
LED36-PR-WIN
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