LED34-HIGH-SMD5R Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Mid-Infrared Light Emitting Diode

LED34-HIGH-SMD5R
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, SMD
Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown
on InAs substrates by MOCVD. InAs is used in the active layer. Wide band gap solid solutions
InAsSbP with P content 50% are used for god electron confinement.
LED34-HIGH-SMD5R has a stable ouput power and a lifetime more then 80000 hours.
Features
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 65 µW qCW
• Package: SMD 5x5 mm with microreflector
Specifications
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
Rating
Min. Typ.
3.30 3.40
300
400
45
65
Max. ^Unit
3.49 µm
500 nm
80 mW
1A
480
600 720 mW
T=300 K
10
200 mA qCW
20
30 ns
V
-240 … +50
°C
300x300
µm
180
°C
SMD type package 5x5 mm based on high
thermal conductivity ceramics with microreflector
Operating Regime
Quasi-CW
• Maximum current 220 mA
• Recommended current 150-200mA
Pulsed
• Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
06.10.2010
LED34-HIGH-SMD5R
1 of 2