LED21FC-PR-WIN Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Mid-Infrared Light Emitting Diode

LED21FC-PR-WIN
TECHNICAL DATA
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Light Emitting Diodes with central wavelength 2.15 µm series are based on heterostructures grown
on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap
solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED21FC-PR-WIN has a stable ouput power and a lifetime more then 80000 hours.
Features
• Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design
• Peak Wavelength: typ. 2.15 µm
• Optical Ouput Power: typ. 1.2 mW qCW
• Package: TO-18, with PR and window
Specifications
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA CW
200 mA qCW
Rating
Min. Typ.
2.10 2.15
100
150
0.8
1.2
Max. ^Unit
2.19 µm
250 nm
2 mW
1A
20
30
40 mW
T=300 K
10
200 mA qCW
20
30 ns
V
-240 … +50
°C
670x770
µm
180
°C
TO-18, with parabolic reflector and
quartz window
(Unit: mm)
Operating Regime
Quasi-CW
• Maximum current 220 mA
• Recommended current 150-200mA
Pulsed
• Maximum current 1 A
(puls lenght 500 ns, repetition rate 2kHz)
06.10.2010
LED21FC-PR-WIN
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