LED19 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – Mid-Infrared Light Emitting Diode

LED19
TECHNICAL DATA
Mid-Infrared Light Emitting Diode
Light Emitting Diodes with central wavelength 1.95 µm series are based on heterostructures grown
on GaSb substrates by LPE. Solid solutions GaInAsSb are used in the active layer. Wide band gap
solid solutions AlGaAsSb with Al content 64% are used for good electron confinement.
LED19 has a stable ouput power and a lifetime more then 80000 hours.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
GaInAsSb/AlGaAsSb
typ. 1.95 µm
typ. 1 mW qCW
TO-18
with cap and window
Absolute Maximum Ratings (T_A=25°C)
Item
Peak Wavelength
FWHM
Quasi-CW
Optical Power
Pulsed
Optical Power
Switching Time
Operation Voltage
Operating
Temperature
Emitting Area
Soldering
Temperature
Package
Condition
T=300 K
150 mA qCW
Min.
1.90
100
Value
Typ.
1.95
150
Unit
Max.
1.99 µm
200 nm
200 mA qCW 0.8
1.0
1.2 mW
1 A, f=1 kHz,
duty cycle
20
25
30 mW
0.1%
T=300 K
10
20
30 ns
200 mA qCW 0.5
-
1.5
V
-200 … +50
°C
300 x 300
µm
180
°C
TO-18, with non-removeable cap and window
Operation Instructions
• LED basic circuit connection
24.09.2012
(Unit: mm)
• We recommend to use one of our drivers
and evaluation boards designed for those
Mid-IR LEDs
D-11, D-31, D-31M
DLT-27, DLT-37
mD-1c, mD-1p
LED19
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