LED1450-66-60 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED1450-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaAsP
LED1450-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaAsP diode chips, mounted on a metal stem TO-66 with AIN
ceramics and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
InGaAsP, 60 LED chips
1450 nm
60 mW
TO-66 stem with AIN
clear silicone and epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
5.5
Forward Current
I_F
800
Pulse Forward Current *¹
I_FP
5
Reverse Voltage
V_R
50
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *²
T_stg
-30 … +110
T_sol
240
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds at 260°C
Unit
W
mA
A
V
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Min.
Typ.
Peak Wavelength
Half Width
Total Radiated Power
Forward Voltage
Reverse Voltage
Viewing Half Angle
Rise Time
Fall Time
λ_P
I_F = 600 mA
1400
Δλ
I_F = 600 mA
-
P_O
I_F = 600 mA
-
V_F
I_F = 600 mA
-
V_R
I_R = 10 µA
30
Θ_1/2
I_F = 600 mA
-
t_R
I_F = 100 mA
-
t_F
I_F = 100 mA
-
1450
100
60
6.0
-
±60
15
10
Total Radiated Power measured by Ando Optical Multi Meter AQ2140 & AQ2742.
Heat Sink is required, to keep the LED at ≤60 °C.
Max.
1500
-
-
-
-
-
-
-
Unit
nm
nm
mW
V
V
deg.
ns
ns
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED1450-66-60
1 of 2