LED1300-66-60 Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED1300-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaAsP
LED1300-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaAsP diode chips, mounted on a metal stem TO-66 with AIN
ceramics and covered with double coated clear epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure:
• Peak Wavelength:
• Optical Output Power:
• Package:
• Lens:
InGaAsP, 60 LED chips
1300 nm
140 mW
TO-66 stem with AIN
clear epoxy resin
Absolute Maximum Ratings (T_A=25°C)
Item
Symbol Value
Power Dissipation
P_D
5.4
Forward Current
I_F
800
Pulse Forward Current *¹
I_FP
5
Reverse Voltage
V_R
50
Thermal Resistance *²
R_TH
2
Operating Temperature
T_opr
-30 … +80
Storage Temperature
Soldering Temperature *³
T_stg
-30 … +110
T_sol
240
*¹ duty = 1%, pulse width = 1 µs
*² junction – package, mounted on heat sink
*³ must be completed within 3 seconds at 260°C
Unit
W
mA
A
V
K/W
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Half Width
Total Radiated Power
Forward Voltage
Reverse Voltage
Viewing Half Angle
Rise Time
Fall Time
Δλ
I_F = 100 mA
P_O
I_F = 600 mA
I_F = 800 mA
V_F
I_F = 600 mA
I_F = 800 mA
V_R
I_R = 10 µA
Θ_1/2
I_F = 100 mA
t_R
I_F = 100 mA
t_F
I_F = 100 mA
Total Radiated Power measured by G8370-85
Heat Sink is required, to keep the LED at ≤60 °C.
Min.
-
-
-
-
-
30
-
-
-
Typ.
80
140
170
5.0
5.2
-
±60
15
10
Max.
-
-
-
-
-
-
-
-
-
Unit
nm
mW
V
V
deg.
ns
ns
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
25.04.2012
LED1300-66-60
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