LED1200-66-60 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High Power LED Array

LED1200-66-60
TECHNICAL DATA
High Power LED Array, 60 chips
InGaAsP
LED1200-66-60 is a wide viewing and extremely high output power illuminator assembled with a
total of 60 high efficiency InGaAsP diode chips, mounted on a metal stem TO-66 with AIN
ceramics and covered with double coated clear silicone and epoxy resin.
These devices are designed for high current operation with proper heat sinking to improver thermal
conductive efficiency.
Specifications
• Structure: InGaAsP, 60 LED chips
• Peak Wavelength: typ. 1200 nm
• Optical Output Power: typ. 60 mW
• Package: TO-66 stem with AIN,
clear silicone and epoxy resin
Absolute Maximum Ratings (T_C=25°C)
Item
Symbol
Power Dissipation
P_D
Forward Current
I_F
Pulsed Forward Current *¹
I_FP
Operating Temperature
T_opr
Storage Temperature
T_stg
Soldering Temperature *²
T_sol
*¹ duty = 1%, pulse width = 1 µs
*² must be completed within 3 seconds
Value
5.5
800
5
-30 … +80
-30 … +110
240
Unit
W
mA
A
°C
°C
°C
(Unit: mm)
Electro-Optical Characteristics
Item
Symbol Condition
Total Radiated Power
Forward Voltage
Reverse Voltage
Peak Wavelength
Half Width
Viewing Half Angle
Rise Time
Fall Time
P_O
I_F = 600 mA
V_F
I_F = 600 mA
V_R
I_R = 10 µA
λ_P
I_F = 600 mA
Δλ
I_F = 600 mA
Θ_1/2
I_F = 600 mA
t_f
I_F = 600 mA
t_f
I_F = 600 mA
Heat Sink is required, thermal resistance <8K/W
Min.
-
-
30
1150
-
-
-
-
Typ.
60
6.0
-
1200
60
±60
15
10
Max.
-
-
-
1250
-
-
-
-
Unit
mW
V
V
nm
nm
deg.
ns
ns
Notes
• This high power LED must be cooled!
• Do not view directly into the emitting area of the LED during operation!
• The above specifications are for reference purpose only and subjected to change without prior notice.
07.04.2011
LED1200-66-60
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