LED1050-35XXX Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power InGaAsP NIR LED

LED1050-35xxx
High Power InGaAsP NIR LED
LED1050-35xxx is an InGaAsP LED mounted on a metal stem and covered with epoxy
resin or glass lens can.
On forward bias, it emits a spectral band of radiation, which peaks at 1050nm.
Absolute Maximum Ratings
Item
Symbol
Maximum Rated
Value
Unit
Power Dissipation
PD
130
mW
Forward Current
IF
100
mA
Pulse Forward Current
IFP
1000
mA
Reverse Voltage
VR
5
V
Operating Temperature
TOPR
-20 ~ +90
°C
Storage Temperature
TSTG
-30 ~ +100
°C
Soldering Temperature
TSOL
260
°C
Ambient
Temperature
Ta=25°C
Ta=25°C
Ta=25°C
Ta=25°C
► Pulse Forward Current condition: Duty=1% and Pulse Width=1us.
► Soldering condition: Soldering condition must be completed within 3 seconds at 260°C
Electro-Optical Characteristics [Ta=25°C]
Type No.
LED1050-35K00
LED1050-35K42
LED1050-35M00
LED1050-35M32
LED1050-35T52
Radiated Power at I_F =50mA [mW]
Minimum
Typical
Maximum
1.0
1.5
1.5
1.5
1.0
Viewing Half Angle [θ _1/2]
± 50°
± 6°
± 50°
± 15°
± 55°
► Radiated Power is measured by Ando Optical Multi Meter AQ2140 & AQ2742
18.08.2010
led1050_35xxx.doc
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