LAPD-2-09-17-CHIP Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Photodiode Chip die

LAPD-2-09-17-CHIP
TECHNICAL DATA
Photodiode Chip die
InGaAs
LAPD-2-09-17-CHIP adopt InGaAs pin structure based on InP by MOCVD method and planar
diffusing technology. The active area is Ø 2 mm respectively.
Absolute Maximum Ratings
Item
Reverse Voltage
Reverse Current
Forward current
Operating Temperature
Storage Temperature
Symbol
U_R
I_R
I_F
T_opr
T_stg
Value
20
20
10
-20 … +85
-40 … +85
Unit
V
mA
mA
°C
°C
Specifications
Item
Wavelength Range
Active Area
Saturation Power
Specific Detectivity (D*)
Responsibility (0 V)
Capacitance
Dark Current
Shunt Resistance
Chip Size
Chip Thickness
1550 nm
1550 nm
650 nm
850 nm
1310 nm
1550 nm
0V
-5 V
-5 V
Packing: Chips on adhesive film
Min.
-
2.5
0.02
0.10
0.80
0.85
-
-
-
6
Typ.
0.9 .. 1.7
Ø2
2
5
0.05
0.20
0.90
0.95
500
250
10
25
1940 x 1940
300
Max.
-
-
-
-
-
-
800
400
40
-
Unit
µm
mm
dBm
10¹² Jones
A/W
pF
nA
MΩ
µm
µm
27.04.2011
LAPD-2-09-17-CHIP
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