IQ80XL Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – Si Photodiode

IQ80xL series
TECHNICAL DATA
Si Photodiode, with integrated TI amplifier
Features
Applications
• Si-photodiode with integrated low noise
JFET TI amplifier
• integrated feedback resistor and capacitor
• decadic staggered responsivity
• spectral range VIS and NIR
• very low offset- and drift parameters
• high dynamic range
• dual power supply
• hermetically sealed TO-5 package
• assembly isolated to ground
• collimator lens
• components are in conformity with ROHS
and WEEE
• common light-/radiation measuring
applications
• detector for measuring of low radiation
intensities with high signal to noise
level
• spectroscopy
• medical diagnostics
Absolute Maximum Ratings
Item
Symbol
Operation Voltage
U_op
Operating Temperature
T_op
Storage Temperature
T_st
Soldering Temperature *
T_sol
* must be completed within 3 seconds
Value
±18
-25 … +85
-40 … +100
260
Unit
V
°C
°C
°C
Characteristics (25°C)
Item
Active Area
Feedback Resistor
Dark Offset Voltage
Noise Voltage
Spectral Range
Peak Sensitivity
Wavlength
Responsitiy at λ_P
Rise time
Frequency Range
Opening Angle
Saturation Voltage
Short Current
Operation Voltage
Current Consumption
Symbol
A
R
U_offset
U_N
λ
λ_p
S
t_r
Δf
U_op
Test Conditions
E = 0 lx
B = 20 kHz
S = 0,1*S_max
S = S_max
-3 dB
S(φ)=0,5* S_max*cos(φ)
R_L = 2 kΩ
IQ802L IQ801L IQ800L
4,8
1
10
100
±0.5
±0.5
±2
0.2
0.3
0.5
400 … 1100
850
0.6
6
60
3
15
35
120
25
10
±50
-14,8 (-14,5)
±45
±5 … ±15
2.2 (2.6)
Unit
mm²
MΩ
mV
mV_rms
nm
nm
mV/nW
µs
kHz
deg.
V
mA
V
mA
02.08.2010
IQ80xL
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