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H2A1-H365-R4 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – High Power single chip LED
H2A1-H365-r4
High Power single chip LED
H2A1-H365 is a InGaN based, high power 365 nm single chip LED in standard hexagonal Aluminum package for
general application. Slots in the Aluminum-core PCB allow for easy mounting of standard collimating optics and are
also suitable for M3 or M4 mounting screws. Large electrical interconnection pads on the PCB allow for convenient
installation.
Specifications
• Structure: InGaN
• Peak Wavelength: 365 nm
• Optical Output Power: typ. 270 mW
• Life Time: > 10.000 hours
• Lead free product - RoHS compliant
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Value
Unit
Power Dissipation, DC
PD
1000
mW
Forward Current, DC
IF
500
mA
Pulsed Current (1% duty cycle, 1kHz)
IFP
1000
mA
Reverse Voltage
UR
-5
V
Operating Temperature
Topr
-30 … +70
°C
Storage Temperature
Tstg
-30 … +85
°C
Soldering Temperature (max. 1,5 s)
Tsol
330
°C
Electro-Optical Characteristics (Ta=25°C)
Parameter
Symbol
Forward Current
IF
Viewing Angle
φ
CW Output Power (rank 4) PO
Peak Wavelength
λP
Forward Voltage
UF
Half Width (FWHM)
Δλ
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Condition
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
IF = 350 mA
Min.
Device Materials
foundation
Lens
Electrodes
PCB
Item
Material
Plastic
Silicone resin
AgCu
Al
Typ.
350
± 75
270
365
3.5
12
Max.
4.2
20
Unit
mA
deg.
mW
nm
V
nm
28.04.2015
H2A1-H365
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