ELS_810_638 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – photoelectric barriers

ELS-810-638
Radiation
Infrared
Type
SMD - LED on silicon
carrier
Description
High-power, double-hetero AlGaAs structure
with removed substrate on heatsink for „up
side down“ mounting
3,9
2,75
Technology
AlGaAs/AlGaAs
Case
waterclear, plastic lens
Applications
Photoelectric barriers, remote controls,
illumination for CCD-cameras and night-vision
systems, alarm guard systems, fibre optics
Ø2,2
4
all dimensions in mm, tolerance: ± 0,05 mm
Maximum Ratings
T_amb = 25°C, unless otherwise specified
Parameter
Test conditions
DC forward current
on heatsink
Peak forward current
Reverse voltage
Operating temperature range
t_p ≤ 10 µs, f ≤ 500 Hz
I_R = 10 µA
Junction temperature
Optical and Electrical Characteristics
T_amb = 25°C, unless otherwise specified
Parameter
Forward voltage
Test conditions _Symbol
I_F = 100 mA
V_F
Forward voltage
I_F = 250 mA
V_F
Radiant power
I_F = 100 mA
Φ_e
Peak wavelength
I_F = 100 mA
λ_p
Spectral bandwidth at 50%
I_F = 100 mA
Δλ_0.5
Viewing angle
I_F = 100 mA
ϕ
Switching time
I_F = 100 mA
t_r, t_f
Temperature coefficient of
forward voltage
I_F = 100 mA
TKV_F
Symbol
I_F
I_FRM
V_R
T_amb
T_jmax
Value
250
2000
5
-25 to +85
100
Min Typ Max
1.75
2.2
17
790 810 830
30
30
35
30
-2
Thermal resistance
junction/heatsink
I_F = 100 mA
R_th
50
Unit
mA
mA
V
°C
°C
Unit
V
V
mW
nm
nm
deg
ns
mV/K
K/W
18.08.2010
els_810_638.doc
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