ELJ-810-228B Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – High-power infrared-LED module

Infrared LED - Module
ELJ-810-228B
Radiation
Infrared
Type
20 degrees
Technology
Case
AlGaAs/AlGaAs plastic lens, metal case
Description
High-power infrared-LED module, double-hetero AlGaAs
structure, six chips are soldered on metal header, fast
switching time
Outline: H=13 mm (± 0,5)
Applications
Illumination for CCD-cameras, remote control and
optical communications, traffic signals,
measurement systems
M10
6,4
R
R
8
Absolute Maximum Ratings
at T_amb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Value
Unit
DC forward current
on heat sink
I_F
250
mA
Peak forward current
t_p≤10 µs, f≤500 Hz
I_FM
2000
mA
Reverse voltage*
I_R = 10 µA
V_R
20
V
Power dissipation
on heat sink (S ≥ 50 cm²)
P
3
W
Operating temperature range
T_amb -60 to +85 °C
Storage temperature range
T_stg
-60 to +85 °C
Junction temperature
*Always protect the LED source against reverse currents
T_j
100
°C
Optical and Electrical Characteristics
at T_amb = 25°C, unless otherwise specified
Parameter
Forward voltage
Forward voltage
Radiant power
Radiant intensity
Peak wavelength
Spectral bandwidth at 50%
Viewing angle
Switching time
Thermal resistance junction-case
Test conditions Symbol Min Typ Max
I_F = 100 mA
V_F
10.5
I_F = 250 mA
V_F
13
I_F = 250 mA
Φ_e
225
I_F = 250 mA
I_e
1.2
I_F = 250 mA
λ_p 790 810 830
I_F = 250 mA
∆λ_0,5
30
I_F = 250 mA
ϕ
20
I_F = 250 mA
t_r, t_f
150
R_thJC
10
Unit
V
V
mW
W/sr
nm
nm
deg
ns
K/W
ROITHNER LASERTECHNIK
Schönbrunner Straße 7, A-1040 Vienna, Austria, Tel: [phone], Fax: [phone], [e-mail]