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| ELC-800-25 Datasheet, PDF (1/1 Pages) EPIGAP optoelectronic GmbH – LED - Chip | |||
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ELC-800-25
v 1.0 12.06.2013
Description
ELC-800-25 is a GaAlAs based 325x325 µm bare LED chip die. It is of double hetero structure in
dual combination (DDH), and has a typical emission wavelength of 800 nm. It is delivered on
adhesive film with the wire bond side up
Characteristics (IF=20mA, TAMB=25°C)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Emission Wavelength
λpeak
795
800
805
nm
Forward Voltage
VF
1.60
1.9
V
Reverse Current (VR=5V)
IR
100
µA
Output Power
PO
2.5
3.2
mW
Spectral bandwidth (FWHM)
λâ
27
nm
Rise/Fall time
tR/tF
45/30
ns
Drawing & Dimensions
All dimensions in µm
© All Rights Reserved
The above specifications are for reference purpose only and subjected to change without prior notice
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