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| ELC-770-25 Datasheet, PDF (1/1 Pages) Roithner LaserTechnik GmbH – It is of double hetero structure in dual combination | |||
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ELC-770-25
v 1.0 12.06.2013
Description
ELC-770-25 is a GaAlAs based 325x325 µm bare LED chip die. It is of double hetero structure in
dual combination (DDH), and has a typical emission wavelength of 770 nm. It is delivered on
adhesive film with the wire bond side up
Characteristics (IF=20mA, TAMB=25°C)
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit
Emission Wavelength
λpeak
760
770
780
nm
Forward Voltage
VF
1.65
2.0
V
Reverse Current (VR=5V)
IR
100
µA
Output Power
PO
2.0
2.7
mW
Spectral bandwidth (FWHM)
λâ
16
nm
Rise/Fall time
tR/tF
40/30
ns
Drawing & Dimensions
All dimensions in µm
© All Rights Reserved
The above specifications are for reference purpose only and subjected to change without prior notice
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