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| C365-3SRA1 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – UV LED high power chip die | |||
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C365-3SRA1
TECHNICAL DATA
UV LED high power chip die, 365nm
Drawing
Thickness: 120 µm ± 10 µm
Storage Conditions
Item
Storage time
Storage Temperature
Storage Humidity
Value
3 Months
5 ⦠+35 °C
45 â¦85 %
Specifications (If=100mA, Ta=25°C)
Item
Symbol
Electrical Specification
Forward Voltage *1
UF
Reverse Current
IR
Optical Specification
Optical Power
PO
Peak Wavelength *2
λP
Spectral Half Width (FWHM)
Îλ
* measurement tolerance is ± 0.2 V, ± 2 nm
Min.
3.2
5
363
Device Materials
Item
Material
Wafer material
GaN based on Sapphire Substrate
Electrodes
n-contact Au
p-contact Au
C365-3SRA1 is RoHS compliant
Typ.
3.6
-
-
15
All dimensions in µm
Max.
Unit
4.2
V
10.0
µA
10
mW
370
nm
nm
29.01.2013
C365-3SRA1
1 of 3
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