C365-2SR2 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – UV LED

C365-2SR2
TECHNICAL DATA
UV LED, Chip Die
GaN
C365-2SR2 is a 280x280 µm UV LED chip die, based on GaN material. On forward bias, it emits a radiation
of typical 1.0-1.5 mW at a peak wavelength of 365 nm.
Specifications
• Structure:
• Substrate:
• Peak Wavelength:
• Optical Output Power:
GaN based material
Sapphire
365 nm
1.0-1.5 mW
• Bottom Area:
• Electrodes:
280x280 µm ±20 µm
Au alloy
Electro-Optical Characteristics
(Unit: µm)
Item
Symbol Condition
Min.
Typ.
Forward Voltage
V_F
I_F = 20 mA
3.2
3.6
Reverse Current
Peak Wavelength *¹
I_R
V_R = 5 V
-
-
λ_P
I_F = 20 mA
363
-
Half Width
Δλ
I_F = 20 mA
-
15
Total Radiated Power
Po
I_F = 20 mA
1.0
-
*¹ Measurement error: ±2 nm
*² Radiated Power is measured as chip mounted in TO-18 header; measurement error: 10%
*³ on request
Max.
4.2
10
370
-
1.5
Unit
V
µA
nm
nm
mW
Note: The above specifications are for reference purpose only and subjected to change without prior notice.
23.01.2013
C365-2SR2
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