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| C355-2SR1 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – UV LED chip die | |||
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C355-2SR1
TECHNICAL DATA
UV LED chip die, 355nm
Drawing
Thickness: 120 µm ± 10 µm
Storage Conditions
Item
Storage time
Storage Temperature
Storage Humidity
Value
3 Months
5 ⦠+35 °C
45 â¦85 %
Specifications (If=20mA, Ta=25°C)
Item
Symbol
Electrical Specification
Forward Voltage *1
UF
Reverse Current
IR
Optical Specification
Optical Power
PO
Peak Wavelength *2
λP
Spectral Half Width (FWHM)
Îλ
* measurement tolerance is ± 0.2 V, ± 2 nm
Min.
3.2
0.5
353
Device Materials
Item
Material
Wafer material
GaN based on Sapphire Substrate
Electrodes
n-contact Au
p-contact Au
XSL-355-5E is RoHS compliant
Typ.
3.6
-
-
15
All dimensions in µm
Max.
Unit
4.2
V
10.0
µA
1.0
mW
360
nm
nm
08.11.2012
C355-2SR1
1 of 3
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