AS081Q600W Datasheet, PDF (1/2 Pages) Roithner LaserTechnik GmbH – High Power Stacked Infrared Laser Diode Array

AS081Q600W
TECHNICAL DATA
High Power Stacked Infrared Laser Diode Array
Features
• Output Power: 600 W qCW
• 780-830 nm Emission Wavelength
• Spectral Width: ≤4 nm
• High Reliability, High Efficiency
• QCW stack can be designed according to the
customer of non-standard products heat sink
package
Applications
• Laser Pumping
• Medical Usage
• High power laser diode applications
Specifications (25°C)
Item
Optical Specifications
qCW Output Power
qCW Output Power / Bar
Array Length
Center Wavelength
Wavelength Tolerance
Spectral Width
Package Style
Bar Length
Number of Bars
Wavelength Temperature Coefficient
Beam Divergence
Electrical Specifications
Slope Efficiency
Conversion Efficiency
Threshold Current
Operating Current
Operating Voltage
Absolute Maximum Ratings
Reverse Voltage
Operating Temperature
Storage Temperature
Symbol
P_O
P_S
L
λ_C
Δλ
θ_┴×θ_║
E_S
N_S
I_TH
I_F
U_F
U_R
T_OP
T_STG
Value
600
60
10
780-830
±5
≤4
Micro Channel
0.5
10
0.3
40x8
≥1
≥ 40%
≤ 25
≤ 90
≤ 20
2.5
+10 … +40
-40 ... +85
Unit
W
W
mm
nm
nm
nm
mm
nm/°C
deg
W/A
A
A
V
V
°C
°C
20.09.2010
AS081Q600W
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