APG2C3-590 Datasheet, PDF (1/4 Pages) Roithner LaserTechnik GmbH – High Power Single Chip LED

APG2C3-590
High Power Single Chip LED
APG2C3-590 is a InGaN based, high power 590 nm single chip LED in standard emitter package for general
application.
Specifications
• Structure: InGaN, 3W high power chip
• Peak Wavelength: 590 nm
• Optical Output: 36 lm
• Life Time: > 30.000 hours
• Lead free product - RoHS compliant
Absolute Maximum Ratings (T_a=25°C)
Parameter
Symbol
Value
Unit
Power Dissipation, DC
P_D
2.8
W
Forward Current, DC
I_F
700
mA
Pulsed Current (10% duty cycle, 100 µs kHz)
I_FP
1400
mA
Reverse Voltage
U_R
-5
V
Operating Temperature
T_opr
-40 … +65
°C
Storage Temperature
T_stg
-40 … +100
°C
Soldering Temperature (max. 3 s)
T_sol
260
°C
Electro-Optical Characteristics (T_a=25°C)
Parameter
Forward Current
Viewing Angle
Luminous Flux
Peak Wavelength
Half Width (FWHM)
Forward Voltage
Symbol
I_F
φ
Φv
λ_P
Δλ
U_F
Condition
I_F = 700 mA
I_F = 700 mA
I_F = 700 mA
I_F = 700 mA
I_F = 700 mA
Min.
-
-
580
-
2.8
Typ.
700
± 60
36
-
20
-
Max.
-
-
600
-
3.2
Unit
mA
deg.
lm
nm
nm
V
Device Materials
Foundation
Lens
Electrodes
Heat Sink
Item
Plastic
Acryl
AgCu
AgCu
Material
13.08.2012
APG2C3-590
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