APG2C1-1020 Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – IR High Power single chip LED

APG2C1-1020
IR High Power single chip LED
APG2C1-1020 is a GaAlAs based, high power 1020 nm single chip LED in standard emitter package for
general application.
Specifications
• Structure: GaAlAs
• Peak Wavelength: 1020 nm
• Optical Output Power: typ. 40 mW
• Life Time: > 10.000 hours
• Housing: standard emitter package
Absolute Maximum Ratings (T_a=25°C)
Parameter
Power Dissipation, DC
Forward Current, DC
Pulsed Current (1% duty cycle, 1kHz)
Reverse Voltage
Operating Temperature
Storage Temperature
Soldering Temperature (max. 1,5 s)
Symbol
P_D
I_F
I_FP
U_R
T_opr
T_stg
T_sol
Electro-Optical Characteristics (T_a=25°C)
Parameter
Forward Current
Viewing Angle
CW Output Power
Peak Wavelength
Forward Voltage
Half Width (FWHM)
Symbol
I_F
φ
P_O
λ_P
U_F
Δλ
Condition
I_F = 350 mA
I_F = 350 mA
I_F = 350 mA
I_F = 350 mA
I_F = 350 mA
Wavelength measurements tolerance is +/- 2%
Output power measurement tolerance is +/- 10%
Voltage measurement tolerance is +/- 2%
Min.
-
-
-
Device Materials
Foundation
Lens
Electrodes
Heat Sink
Item
Plastic
Acryl
AgCu
AgCu
Material
Value
1000
500
1000
-5
-30 … +70
-30 … +85
330
Typ.
350
± 75
40
1020
1.3
35
Max.
-
-
Unit
mW
mA
mA
V
°C
°C
°C
Unit
mA
deg.
mW
nm
V
nm
13.08.2012
APG2C1-1020
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