APD500-LCC Datasheet, PDF (1/3 Pages) Roithner LaserTechnik GmbH – silicon avalanche photodiode

APD500-LCC
v 1.1 05.03.2014
Description
APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It
features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance.
APD500-LCC is typically used for Laser Range Finding and LIDAR applications.
Maximum Ratings
Parameter
Supply Voltage
Forward Current
Power Dissipation
Storage Temperature
Operating Temperature
Symbol
V_PD
I_F
P_E
T_STG
T_OP
Values
Min.
Max.
0.95 x V_BR
1
1
- 55
+ 100
- 50
+ 85
Unit
V
mA
mW
°C
°C
Characteristics (T_CASE = 25°C)
Parameter
Symbol
Spectral response range
λ
Peak sensivity wavelength
λ_P
Photosensitive area
Ø
Photosensitivity (λ=850nm,Φe=1µW, M=100)
R_e
Response time (λ=800nm,f=1MHz,RL=50Ω)
t_s
Dark current (M=100)
I_D
Cutoff frequency
f_C
Terminal capacitance (M=100,f=1MHz)
C_t
Optimum gain
M
Breakdown voltage (I_R=10 µA)
V_BR
Temp. coefficient of V_BR (TOP=-40°C~85°C)
δ
Min.
400
0.50
0.2
100
Values
Typ.
850
500
0.55
0.6
0.4
1000
1.2
60-80
0.9
Max.
1100
1.5
3
220
Unit
nm
nm
µm
A/W
ns
nA
MHz
pF
V
V/°C
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