SCS112AGC Datasheet, PDF (9/11 Pages) Rohm – Silicon Carbide Schottky Barrier Diodes

Absolute Maximum Ratings
Electrical Characteristics

(Ta = 25°C)
(Ta = 25°C)
Part No. _{VRM(V) VR(V) IO(A) IFSM(A) VF(V)}
I_R(µA)
60Hz.1 Typ.
I_F(A)
Max.
V_R(V)
SCS106AGC 600
600
6
24
1.5
6
120
600
SCS108AGC 600
600
8
32
1.5
8
160
600
SCS110AGC 600
600
10
40
1.5
10
200
600
SCS112AGC 600
600
12
48
1.5
12
240
600
SCS120AGC 600
600
20
80
1.5
20
400
600
Table 4. Available Schottky barrier diodes range from 6A to 20A-rated 600V products.
Package
TO-220AC [2 pin]
TO-220AC [2 pin]
TO-220AC [2 pin]
TO-220AC [2 pin]
TO-220AC [2 pin]
ROHM Semiconductor Silicon Carbide
Schottky Barrier Diodes
Though SiC components still command a sizeable (est.
5x currently) premium in price over Si, the technology
has advanced to the point where the benefits are com-
pelling for an increasing number of applications. This is
especially the case for Schottky barrier diodes. Currently
the largest markets for SiC SBDs are PFC / power sup-
plies and solar inverters.
ROHM Semiconductor’s SCS1xxAGC series of SiC
Schottky barrier diodes has a rated blocking voltage of
600V, is available in 6, 8, 10, 12 and 20 A, and offers
industry-leading low forward voltage and fast recovery
time. Compared to Si FRD diodes, all SiC diodes incur
much lower switching loss. Compared to other SiC
diodes, ROHM SiC SBDs feature lower V_F and thus
comparatively lower conduction loss. Table 3 shows
the characteristics at room temperature, but the low V_F
advantage remains true at high (150ºC) as well.
It’s worth noting that the 20 A-rated part is achieved
with a single die, not by paralleling two die (although the
2-die version is available for sampling for interested cus-
tomers).
Table 4 presents a more detailed description of ROHM
600 V SBDs. All products have a typical t_rr of 15 nsec.
At higher temperatures, ROHM Semiconductor SBDs
demonstrate a smaller increase in V_F than other avail-
able products. For example at 150° C, the 10 A/600
V SCS110AGC features a V_F of 1.6 V (1.5 V @25° C)
compared to 1.6 V (1.4 V@25°C), 1.85 V and 2.2 V for
comparably rated SBDs from other suppliers.
Initial SBDs are rated at a maximum operating tem-
perature of 150°C. Even though SiC has the capability
to perform at much higher temperatures than silicon
devices, most engineers will initially design to the 150°C
maximum rating they have traditionally used and use the
higher operating capability as a safety factor.
Initial products are offered in the popular TO-220, 2-pin
package with exposed fin. ROHM Semiconductor also
utilizes surface mount D2PAK and TO-220 fully isolated
packaging technology. These packages may be offered
in the future depending on customer interest.
These Schottky barrier diodes are but the first in
ROHM’s SiC product lineup. And through extensive R&D
activites, more products in the pipeline. In fact, 1200 V
SiC SBDs and MOSFETs are already sampling at strate-
gic partners to address higher power applications such
as UPS and to develop all-SiC power devices. SiC and
Si combination and all-SiC modules are also expected
to be part of future offerings.
ROHM Semiconductor
SiC Schottky Barrier Diodes
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