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RGTH50TS65D Datasheet, PDF (8/12 Pages) Rohm – 650V 25A Field Stop Trench IGBT
RGTH50TS65D
lElectrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
10
Data Sheet
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
Eoff
0.1
Eon
0.01
0
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive load
10
20
30
40
50
Collector Current : IC [A]
1
Eoff
Eon
0.1
0.01
0
VCC=400V, IC=25A
VGE=15V, Tj=175ºC
Inductive load
10
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
1000
Cies
100
Coes
10
f=1MHz
VGE=0V
Tj=25ºC
1
0.01
0.1
Cres
1
10
100
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
15
10
5
VCC=300V
IC=25A
Tj=25ºC
0
0
10
20
30
40
50
Gate Charge : Qg [nC]
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2014.05 - Rev.B