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RGT8NL65D Datasheet, PDF (8/13 Pages) Rohm – 650V 4A Field Stop Trench IGBT
RGT8NL65D
Electrical Characteristic Curves
Fig.13 Typical Switching Energy Losses
vs. Collector Current
10
Datasheet
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
10
1
1
0.1
0.01
0
Eon
Eoff
VCC=400V, VGE=15V
RG=50Ω, Tj=175ºC
Inductive load
2
4
6
8
10
Collector Current : IC [A]
0.1 Eoff
Eon
0.01
0
10
VCC=400V, IC=4A
VGE=15V, Tj=175ºC
Inductive load
20
30
40
50
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
10000
1000
100
Cies
Coes
10
f=1MHz
VGE=0V
Tj=25ºC
Cres
1
0.01
0.1
1
10
100
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
15
10
5
VCC=400V
IC=4A
Tj=25ºC
0
0
5
10
15
Gate Charge : Qg [nC]
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2017.05 - Rev.A