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S2301_16 Datasheet, PDF (7/13 Pages) Rohm – N-channel SiC power MOSFET bare die
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S2301
lElectrical characteristic curves
Data Sheet
Fig.9 Static Drain - Source On - State
Resistance vs. Gate - Source Voltage
0.8
Ta = 25ºC
Pulsed
0.6
0.4
ID = 20A
0.2
ID = 10A
0
6 8 10 12 14 16 18 20 22
Gate - Source Voltage : VGS [V]
Fig.10 Static Drain - Source On - State
Resistance vs. Junction Temperature
0.15
VGS = 18V
Pulsed
0.1
ID = 20A
ID = 10A
0.05
0
-50
0
50
100
150
Junction Temperature : Tj [ºC]
Fig.11 Static Drain - Source On - State
Resistance vs. Drain Current
1
VGS = 18V
Pulsed
0.1
0.01
0.1
Ta = 150ºC
Ta = 75ºC
Ta = 25ºC
Ta = -25ºC
1
10
100
Drain Current : ID [A]
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2016.02 - Rev.C
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