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RGT16TM65D Datasheet, PDF (7/13 Pages) Rohm – 650V 8A Field Stop Trench IGBT
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RGT16TM65D
Electrical Characteristic Curves
Datasheet
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 25ºC
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
20
Tj= 175ºC
15
IC= 4A
15
IC= 8A
10
10
IC= 16A
5
5
IC= 4A
IC= 8A
IC= 16A
0
5
10
15
20
Gate To Emitter Voltage : VGE [V]
0
5
10
15
20
Gate To Emitter Voltage : VGE [V]
Fig.11 Typical Switching Time
vs. Collector Current
1000
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
100
tf
td(off)
10
td(on)
tr
Fig.12 Typical Switching Time
vs. Gate Resistance
1000
VCC=400V, IC=8A
VGE=15V, Tj=175ºC
Inductive ｌoad
100
tf
td(off)
tr
10
td(on)
1
0
5
10
15
20
Collector Current : IC [A]
1
0
10
20
30
40
50
Gate Resistance : RG [Ω]
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7/11
2017.05 - Rev.A
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