BD9B400MUV Datasheet, PDF (6/34 Pages) Rohm – Integrated MOSFET Single Synchronous Buck DC/DC Converter

BD9B400MUV
Electrical Characteristics (Unless otherwise specified Ta=25°C, VAVIN = VPVIN = 5V, VEN = 5V, VMODE = GND)
Parameter
Symbol
Min
Typ Max Unit
Conditions
AVIN pin
Standby Supply Current
Operating Supply Current
UVLO Detection Threshold
UVLO Release Threshold
UVLO Hysteresis
Enable
EN Input High Level Voltage
EN Input Low Level Voltage
EN Input Current
Reference Voltage, Error Amplifier
FB Terminal Voltage
FB Input Bias Current
Internal Soft Start Time
Soft Start Terminal Current
Control
FREQ Input High Level Voltage
FREQ Input Low Level Voltage
MODE Input High Level Voltage
MODE Input Low Level Voltage
On time1
On time2
Power Good
Power Good Rising Threshold
ISTB
ICC
VUVLO1
VUVLO2
VUVLOHYS
-
-
2.35
2.425
50
0
45
2.45
2.55
100
VENH
2.0
-
VENL
-
-
IEN
-
5
VFB
0.792
0.8
IFB
-
-
TSS
0.5
1.0
ISS
0.5
1.0
VFRQH VAVIN-0.3
-
VFRQL
-
-
VMODEH VAVIN-0.3
-
VMODEL
-
-
ONT1
96
120
ONT2
192
240
VPGDH
75
80
Power Good Falling Threshold
VPGDL
65
70
Output Leakage Current
ILKPGD
-
0
Power Good On Resistance
RPGD
-
100
Power Good Low Level Voltage
PGDVL
-
0.1
SW
High Side FET On Resistance
RONH
-
30
Low Side FET On Resistance
RONL
-
30
High Side Output Leakage Current
RILH
-
0
Low Side Output Leakage Current
RILL
-
0
10
80
2.55
2.7
200
-
0.8
10
0.808
1
2.0
2.0
-
0.3
-
0.3
144
288
85
75
5
200
0.2
60
60
10
10
µA EN=GND
µA
FREQ=AVIN, IOUT=0mA
Non switching
V VIN falling
V VIN rising
mV
V
V
µA EN=5V
V
µA FB=0.8V
ms SS terminal is open
µA
V
V
V
V
ns VOUT=1.2V, FREQ=GND
ns VOUT=1.2V, FREQ=AVIN
%
FB rising,
VPGDH=FB/VFBx100
%
FB falling,
VPGDL=FB/VFBx100
µA PGD=5V
Ω
V IPGD=1mA
mΩ BOOT - SW = 5 V
mΩ
µA No switching
µA No switching
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TSZ02201-0J3J0AJ01200-1-2
22.Apr.2016 Rev.002