SH8M5_09 Datasheet, PDF (5/6 Pages) Rohm – 4V Drive Nch+Pch MOSFET

SH8M5
P-ch
Electrical characteristic curves
10000
Ta=25°C
f=1MHz
VGS=0V
Ciss
1000
Coss
Crss
100
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
VDS= −10V
Pulsed
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.4 Typical Transfer Characteristics
100
VGS= −10V
Pulsed
10
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
10000
1000
tf
td (off)
100
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
tr
td (on)
1
0.01
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.2 Switching Characteristics
200
Ta=25°C
Pulsed
150
100
50
ID=−7.0A
ID=−3.5A
0
0 2 4 6 8 10 12 14 16
GATE-SOURCE VOLTAGE : −VGS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
100
VGS= −4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Data Sheet
8
Ta=25°C
7
VDD= −15V
ID= −7A
6
RG=10Ω
Pulsed
5
4
3
2
1
0
0
5 10 15 20 25 30
TOTAL GATE CHARGE : Qg (nC)
Fig.3 Dynamic Input Characteristics
10
Ta=125°C
Ta=75°C
Ta=25°C
1 ^{Ta= −25°C}
VGS=0V
Pulsed
0.1
0.01
0.0
0.5
1.0
1.5
SOURCE-DRAIN VOLTAGE : −VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
1000
100
VGS= −4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
0.1
1
10
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
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2009.12 - Rev.A